Surface reconstructions for InAs(001) studied with density-functional theory and STM

被引：83

作者：

Ratsch, C

Barvosa-Carter, W

Grosse, F

Owen, JHG

Zinck, JJ

机构：

[1] HRL Lab LLC, Malibu, CA 90265 USA

[2] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.62.R7719

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stability of different surface reconstructions on InAs(001) is investigated theoretically and experimentally. Density-functional theory calculations predict four different surface reconstructions to be stable at different chemical potentials. The two dominant reconstructions are the beta 2 (2x4) for high As, and the alpha 2 (2x4) for low As overpressure. This trend is confirmed by scanning tunneling microscopy of carefully annealed InAs(001) surfaces. A similar behavior is predicted for GaAs(001).

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收藏

页码：R7719 / R7722

页数：4

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