Low excess noise characteristics in thin avalanche region GaAs diodes

被引：21

作者：

Li, KF ^{[1
]}

Ong, DS ^{[1
]}

David, JPR ^{[1
]}

Tozer, RC ^{[1
]}

Rees, GJ ^{[1
]}

Robson, PN ^{[1
]}

Grey, R ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 01期

关键词：

D O I：

10.1049/el:19980021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avalanche noise measurements have been performed on a range of homojunction GaAs p(+)-i-n(+) and n(+)-i-p(+) diodes with avalanche widths, w ranging from 1.13 to 0.050 mu m. These noise measurements show that, contrary to McIntyre's avalanche noise theory, there is large reduction in the avalanche noise as w is decreased for both electron and hole initiated impact ionisation.

引用

页码：125 / 126

页数：2

共 8 条

[1] THE DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GALLIUM-ARSENIDE USING AVALANCHE NOISE AND PHOTOCURRENT MULTIPLICATION MEASUREMENTS [J].

BULMAN, GE ;

ROBBINS, VM ;

STILLMAN, GE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2454-2466

[2] Avalanche noise in submicrometre pin diodes [J].

Herbert, DC .

ELECTRONICS LETTERS, 1997, 33 (14) :1257-1258

[3] Noise characteristics of thin multiplication region GaAs avalanche photodiodes [J].

Hu, C ;

Anselm, KA ;

Streetman, BG ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 1996, 69 (24) :3734-3736

[4] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J].

MCINTYRE, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :164-+

[5]

ONG DS, 1997, 24 INT S COMP SEM SA

[6] Investigation of impact ionization in thin GaAs diodes [J].

Plimmer, SA ;

David, JPR ;

Herbert, DC ;

Lee, TW ;

Rees, GJ ;

Houston, PA ;

Grey, R ;

Robson, PN ;

Higgs, AW ;

Wight, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (07) :1066-1072

[7]

VANVLIET KM, 1979, T ELECT DEVICES, V26, P751

[8]

VANVLIET KM, 1979, T ELECT DEVICES, V25, P747

← 1 →