Avalanche noise in submicrometre pin diodes

被引：9

作者：

Herbert, DC

机构：

[1] DRA Electronics Sector, Malvern, Worcestershire, WR14 3PS, St. Andrews Road

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 14期

关键词：

pin diodes; semiconductor device noise;

D O I：

10.1049/el:19970828

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that recent measurements of noise suppression in thin GaAs pin diodes by Hu er al. can be explained as a dead space phenomenon and are consistent with the alpha/beta ratio approaching unity at high electric fields.

引用

页码：1257 / 1258

页数：2

共 8 条

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