Impact ionisation and noise in SiGe multiquantum well structures

被引：9

作者：

Herbert, DC

Williams, CJ

Jaros, M

机构：

[1] UNIV NEWCASTLE UPON TYNE,DEPT CHEM,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

[2] UNIV NEWCASTLE UPON TYNE,DEPT PHYS,NEWCASTLE TYNE NE1 7RU,TYNE & WEAR,ENGLAND

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 17期

关键词：

impact ionisation; semiconductor quantum wells;

D O I：

10.1049/el:19961035

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modified Keldysh form is proposed for ionisation scattering rates in strained SiGe layers. These rates are incorporated into a hot-carrier calculation to study avalanche noise in SiGe MQW structures. It is found that carrier heating is controlled by the thick Si layers and a pulsing of the ionisation in the SiGe layers acts to reduce the excess noise.

引用

页码：1616 / 1618

页数：3

共 10 条

[1] IMPACT IONIZATION THRESHOLDS IN GEXSI1-X ALLOYS AND STRAINED LAYERS [J].