Metal-mediated growth of alternate semiconductor-insulator nanostructures

被引：19

作者：

Kohno, H ^{[1
]}

Iwasaki, T ^{[1
]}

Takeda, S ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 116卷 / 11期

关键词：

nanostructures; nanofabrications; transmission electron microscopy; electron energy-loss spectroscopy;

D O I：

10.1016/S0038-1098(00)00389-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using gold-(lead, tin, antimony or indium) catalysts, we have successfully grown chain-like nanostructures that have a periodic arrangement of crystalline-silicon nanospheres and amorphous silicon oxide. The growth was sensitive to the temperature at which additional metal such as lead was mixed to the gold catalyst. The chains were characterized with electron energy-loss spectroscopy. We observed a peak at 8 eV that was attributed to the surface-plasmon excitation of crystalline-silicon nanospheres covered with a thin silicon oxide layer. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：591 / 594

页数：4

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