Anomalous temperature dependence of photoluminescence from InAs quantum dots

被引：47

作者：

Jiang, WH ^{[1
]}

Ye, XL ^{[1
]}

Xu, B ^{[1
]}

Xu, HZ ^{[1
]}

Ding, D ^{[1
]}

Liang, JB ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 05期

关键词：

D O I：

10.1063/1.1288231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled InAs quantum dots are fabricated on a GaAs substrate by molecular beam epitaxy. The dots are covered by several monolayers of In0.2Ga0.8As before a GaAs cap layer and an in situ postgrowth annealing is performed to tune the emission to higher energy. The temperature dependence of photoluminescence from this structure demonstrates a slower redshift rate of the peak position, a gradual broadening of the linewidth and an abnormal enhancement of integrated intensity as the temperature is increased from 15 to 300 K. These phenomena are closely related to the introduction of an InGaAs layer and to the intermixing of In and Ga atoms during annealing. We propose a model to explain the unusual increase in PL intensity, which fits the experimental data well. (C) 2000 American Institute of Physics. [S0021-8979(00)04618-1].

引用

页码：2529 / 2532

页数：4

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