CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

被引：85

作者：

Dainesi, P ^{[1
]}

Küng, A

Chabloz, M

Lagos, A

Flückiger, P

Ionescu, A

Fazan, P

Declerq, M

Renaud, P

Robert, P

机构：

[1] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Lab Metrol, CH-1015 Lausanne, Switzerland

[2] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Inst Microsyst, CH-1015 Lausanne, Switzerland

[3] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Ctr Microtechnol, CH-1015 Lausanne, Switzerland

[4] Ecole Polytech Fed Lausanne, Swiss Fed Inst Technol, Lab Elect Gen, CH-1015 Lausanne, Switzerland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2000年 / 12卷 / 06期

关键词：

CMOS; Mach-Zehnder; plasma dispersion; SOI optoelectronics; thermooptic effect;

D O I：

10.1109/68.849076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a fully integrated Mach-Zehnder interferometer in silicon-on-insulator technology. Modulation of the index of refraction is achieved through the plasma dispersion effect resulting in a bandwidth in the 10 MHz range. A particular and innovative design makes this device completely compatible with CMOS technology allowing electronic functions to be integrated on the same substrate. Measurement results, limitations due to thermooptic effect and absorption related to charge injection together with further improvements are discussed.

引用

页码：660 / 662

页数：3

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