Morphology and surface reconstructions of GaN(1(1)over-bar00) surfaces

被引：32

作者：

Lee, CD ^{[1
]}

Feenstra, RM

Northrup, JE

Lymperakis, L

Neugebauer, J

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[3] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期

关键词：

D O I：

10.1063/1.1560558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN is grown by plasma-assisted molecular-beam epitaxy on ZnO(1 (1) over bar 00) substrates. Well-oriented (1 (1) over bar 00) GaN surfaces are obtained, and (1 (1) over bar 01) oriented facets are also observed. On the GaN(1 (1) over bar 00) surfaces under Ga-rich conditions, a surface reconstruction with approximate symmetry of "4x5" is found. A model is proposed in which this reconstruction consists of greater than or equal to2 monolayers of Ga terminating the GaN surface. (C) 2003 American Institute of Physics.

引用

页码：1793 / 1795

页数：3

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