Characterization of quantum structures by atomic-force microscopy

被引：19

作者：

Wullner, D

Schlachetzki, A

Bonsch, P

Wehmann, HH

Schrimpf, T

Lacmann, R

Kipp, S

机构：

[1] Tech Univ Braunschweig, Inst Halbleitertech, D-38106 Braunschweig, Germany

[2] Tech Univ Braunschweig, Inst Theoret & Phys Chem, D-38106 Braunschweig, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1998年 / 51卷 / 1-3期

关键词：

atomic-force microscopy; calibration standards; InGaAs on InP; quantum structures;

D O I：

10.1016/S0921-5107(97)00256-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

After a short discussion of errors incurred during atomic-force microscopy (AFM), we suggest methods for calibration. We describe specifically designed standards fabricated by metal organic vapor-phase epitaxy (MOVPE) which are utilized as a basis to calibrate the AFM microscope against a mechanical surface profiler and a scanning electron microscope (SEM). An important prerequisite is a well controlled technique to prepare the surface of the sample for AFM. This is demonstrated for the case of InGaAs/InP. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：178 / 187

页数：10

共 19 条

[1] CORRECTION FOR NONLINEAR BEHAVIOR OF PIEZOELECTRIC TUBE SCANNERS USED IN SCANNING TUNNELING AND ATOMIC-FORCE MICROSCOPY [J].