Study of data retention for nanocrystal Flash memories

被引：33

作者：

Compagnoni, CM ^{[1
]}

Ielmini, D ^{[1
]}

Spinelli, AS ^{[1
]}

Lacaita, AL ^{[1
]}

Previtali, C ^{[1
]}

Gerardi, C ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettr & Informaz, I-20133 Milan, Italy

来源：

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年

关键词：

D O I：

10.1109/RELPHY.2003.1197800

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work presents a detailed study of data retention for nanocrystal Flash memories. Data retention has been investigated in memory cells, with tunnel oxide thickness ranging from 2.8 to 4 nm. Assuming the direct tunneling through the tunnel oxide as the main charge loss mechanism for uncycled memories, we show that a minimum thickness around 4.2 nm is required for the tunnel oxide to guarantee a 10 years data storage. No measurable retention degradation is found up to at least 10(6) program/erase cycles, indicating that the stress-induced leakage current (SILC) does not play a leading role in affecting the memory reliability. The SILC immunity of nanocrystal memories is finally explained by a physical model for charge leakage, accounting for lateral tunneling among the storage nodes.

引用

页码：506 / 512

页数：7

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