Lanthanide impurity level location in GaN, AIN, and ZnO

被引：19

作者：

Dorenbos, P. ^{[1
]}

van der Kolk, E. ^{[1
]}

机构：

[1] Delft Univ Technol, Fac Sci Appl, Mekelweg 15, NL-2629 JB Delft, Netherlands

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES II | 2007年 / 6473卷

关键词：

GaN; AIN; ZnO; lanthanides; localized states;

D O I：

10.1117/12.698977

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method that has proven succesful in locating the energy levels of divalent and trivalent lanthanide ions (Ce, Pr,..., Eu.... Yb, Lu) in wide band gap inorganic compounds like YPO4 and CaF2 is applied to locate lanthanide levels in the wideband semiconductors GaN, AIN, their solid solutions AlxGa1-xN, and ZnO. The proposed schemes provide a description of relevant optical and luminescence properties of these lanthanide doped semiconductors. Especially, the relation between thermal quenching of Tb3+ emission and the location of the energy levels is explained.

引用

页数：10

共 34 条

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