Accurate determination of thermal resistance of FETs

被引：60

作者：

Darwish, AM ^{[1
]}

Bayba, AJ ^{[1
]}

Hung, HA ^{[1
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2005年 / 53卷 / 01期

关键词：

field-effect transistors (FETs); power FETs; thermal effects; thermal resistance; reliability;

D O I：

10.1109/TMTT.2004.839916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The accurate determination of the channel temperature in field-effect transistors (FETs) and monolithic microwave integrated circuits is critical for reliability. An original accurate closed-form expression is presented for the thermal resistance of multifinger FET structures. The model is based on the solution of Laplace's equations in prolate spheroidal coordinates and elliptical cylinder coordinates. The model's validity is verified by comparing the results with finite-element simulations, and experimental observations from liquid-crystal measurements and spatially resolved photoluminescence measurements. Very close agreement is observed in all cases.

引用

页码：306 / 313

页数：8

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