Monte Carlo calculation of electron transport properties of bulk AlN

The Monte Carlo method is used to simulate electron transport in bulk, wurtzite phase AlN using a three valley analytical band structure. Spherical, nonparabolic conduction band valleys at the Gamma, K, and U symmetry points of the Brillouin zone are fitted to a first-principles band structure. The electron drift mobility is calculated as a function of temperature and ionized donor concentration in the ranges of 300-600 K and 10(16)-10(18) cm-3, respectively. The effect of compensation on ionized impurity scattering and the associated change in the mobility are considered. The simulated electron steady-state drift velocity and valley occupancy for electric fields up to 600 kV/cm are presented for 300, 450, and 600 K. Our calculations predict that AlN will exhibit a much smaller negative differential mobility effect than GaN, and that the drift velocity versus electric field curve will show a very broad peak. (C) 1998 American Institute of Physics. [S0021-8979(98)00503-9].