Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy

被引:66
作者
Eguchi, T
Fujikawa, Y
Akiyama, K
An, T
Ono, M
Hashimoto, T
Morikawa, Y
Terakura, K
Sakurai, T
Lagally, MG
Hasegawa, Y
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[3] Japan Sci & Technol Corp, PRESTO, Kawaguchi, Japan
[4] Natl Inst Adv Ind Sci & Technol, RICS, Tsukuba, Ibaraki 3058568, Japan
[5] Osaka Univ, Inst Sci & Ind Res, Ibaraki 5670047, Japan
[6] Hokkaido Univ, Creat Res Initiat Sousei, Sapporo, Hokkaido 0020021, Japan
[7] Univ Wisconsin, Madison, WI 53706 USA
关键词
D O I
10.1103/PhysRevLett.93.266102
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
High-resolution noncontact atomic force microscope (AFM) images were successfully taken on the Ge(105)-(1x2) structure formed on the Si(105) substrate and revealed all dangling bonds of the surface regardless of their electronic situation, surpassing scanning tunneling microscopy, whose images strongly deviated from the atomic structure by the electronic states involved. An atomically resolved electrostatic potential profile by a Kelvin-probe method with AFM shows potential variations among the dangling bond states, directly observing a charge transfer between them. These results clearly demonstrate that high-resolution noncontact AFM with a Kelvin-probe method is an ideal tool for analysis of atomic structures and electronic properties of surfaces.
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页数:4
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共 22 条
[1]  
AKIYAMA K, IN PRESS REV SCI INS, P62
[2]   ATOMIC FORCE MICROSCOPE [J].
BINNIG, G ;
QUATE, CF ;
GERBER, C .
PHYSICAL REVIEW LETTERS, 1986, 56 (09) :930-933
[3]   SURFACE STUDIES BY SCANNING TUNNELING MICROSCOPY [J].
BINNING, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1982, 49 (01) :57-61
[5]   Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation [J].
Fujikawa, Y ;
Akiyama, K ;
Nagao, T ;
Sakurai, T ;
Lagally, MG ;
Hashimoto, T ;
Morikawa, Y ;
Terakura, K .
PHYSICAL REVIEW LETTERS, 2002, 88 (17) :4-176101
[6]   Subatomic features on the silicon (111)-(7x7) surface observed by atomic force microscopy [J].
Giessibl, FJ ;
Hembacher, S ;
Bielefeldt, H ;
Mannhart, J .
SCIENCE, 2000, 289 (5478) :422-425
[7]   ATOMIC-RESOLUTION OF THE SILICON (111)-(7X7) SURFACE BY ATOMIC-FORCE MICROSCOPY [J].
GIESSIBL, FJ .
SCIENCE, 1995, 267 (5194) :68-71
[8]   Rebonded SB step model of Ge/Si(105)1 x 2:: A first-principles theoretical study [J].
Hashimoto, T ;
Morikawa, Y ;
Fujikawa, Y ;
Sakurai, T ;
Lagally, MG ;
Terakura, K .
SURFACE SCIENCE, 2002, 513 (03) :L445-L450
[9]  
HASHIMOTO T, IN PRESS, P62
[10]   Seeing the atomic orbital: First-principles study of the effect of tip termination on atomic force microscopy [J].
Huang, MH ;
Cuma, M ;
Liu, F .
PHYSICAL REVIEW LETTERS, 2003, 90 (25) :4