Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As -: art. no. 125204

被引：14

作者：

Adell, M ^{[1
]}

Ilver, L

Kanski, J

Sadowski, J

Mathieu, R

Stanciu, V

机构：

[1] Chalmers Univ Technol, Dept Expt Phys, S-41296 Gothenburg, Sweden

[2] Lund Univ, MAX Lab, S-22100 Lund, Sweden

[3] Uppsala Univ, Dept Mat Sci, S-75121 Uppsala, Sweden

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.70.125204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using angle resolved photoemission we have investigated annealing-induced changes in Ga1-xMnxAs with x=0.05. We find that the position of the Fermi energy is a function of annealing time and temperature. It is also established that the Curie temperature is strongly correlated to the separation between the Fermi level and the valence band maximum. Valence band photoemission shows that the Mn3d spectrum is modified by the annealing treatments.

引用

页码：125204 / 1

页数：4

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