Effect of temperature on the optical properties of (InGa)(AsN)/GaAs single quantum wells

被引：110

作者：

Polimeni, A

Capizzi, M

Geddo, M

Fischer, M

Reinhardt, M

Forchel, A

机构：

[1] Univ Rome La Sapienza, Dipartimento Fis, Ist Nazl Fis Mat, I-00185 Rome, Italy

[2] INFM, Udr Pavia, I-27100 Pavia, Italy

[3] Univ Parma, Dipartimento Fis, I-43100 Parma, Italy

[4] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 18期

关键词：

D O I：

10.1063/1.1320849

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InxGa1-xAs1-yNy/GaAs single quantum wells emitting at room temperature in the wavelength range lambda=(1.3-1.55) mum have been studied by photoluminescence (PL). By increasing temperature, we find that samples containing nitrogen have a luminescence thermal stability and a room temperature emission efficiency higher than that of the corresponding N-free heterostructures. The temperature dependence of the PL line shape shows a progressive carrier detrapping from localized to extended states as T is increased. Finally, the extent of the thermal shift of the free exciton energy for different y indicates that the electron band edge has a localized character which increases with nitrogen content. (C) 2000 American Institute of Physics. [S0003-6951(00)00744-0].

引用

页码：2870 / 2872

页数：3

共 26 条

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