Single-electron transistor with ultra-high Coulomb energy of 5000 K using position controlled grown carbon nanotube as channel

被引:47
作者
Matsumoto, K
Kinoshita, S
Gotoh, Y
Kurachi, K
Kamimura, T
Maeda, M
Sakamoto, K
Kuwahara, M
Atoda, N
Awano, Y
机构
[1] CREST, Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 24301, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4B期
关键词
single electron transistor; carbon nanotube; room-temperature; defect; Coulomb diamond;
D O I
10.1143/JJAP.42.2415
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the patterned chemical catalyst, the position of the carbon nanotube was successfully controlled. Using this carbon nanotube as a channel, the single electron transistor was fabricated. The defects in the carbon nanotube formed spontaneously quantum dots with the size of similar to1 nm. The single electron transistor showed the room-temperature Coulomb diamond characteristics with an ultra-high Coulomb energy of 5000 K.
引用
收藏
页码:2415 / 2418
页数:4
相关论文
共 10 条
[1]   Engineering carbon nanotubes and nanotube circuits using electrical breakdown [J].
Collins, PC ;
Arnold, MS ;
Avouris, P .
SCIENCE, 2001, 292 (5517) :706-709
[2]   Room temperature Coulomb diamond characteristic of single electron transistor made by AFM nano-oxidation process [J].
Gotoh, Y ;
Matsumoto, K ;
Maeda, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4B) :2578-2582
[3]   Alkaline metal-doped n-type semiconducting nanotubes as quantum dots [J].
Kong, J ;
Zhou, CW ;
Yenilmez, E ;
Dai, HJ .
APPLIED PHYSICS LETTERS, 2000, 77 (24) :3977-3979
[4]   Single- and multi-wall carbon nanotube field-effect transistors [J].
Martel, R ;
Schmidt, T ;
Shea, HR ;
Hertel, T ;
Avouris, P .
APPLIED PHYSICS LETTERS, 1998, 73 (17) :2447-2449
[5]   Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system [J].
Matsumoto, K ;
Ishii, M ;
Segawa, K ;
Oka, Y ;
Vartanian, BJ ;
Harris, JS .
APPLIED PHYSICS LETTERS, 1996, 68 (01) :34-36
[6]   Carbon nanotube single-electron transistors at room temperature [J].
Postma, HWC ;
Teepen, T ;
Yao, Z ;
Grifoni, M ;
Dekker, C .
SCIENCE, 2001, 293 (5527) :76-79
[7]   Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes [J].
Soh, HT ;
Quate, CF ;
Morpurgo, AF ;
Marcus, CM ;
Kong, J ;
Dai, HJ .
APPLIED PHYSICS LETTERS, 1999, 75 (05) :627-629
[8]  
TAKAHASHI Y, 1997, IEEE ELECTR DEVICE L, V43, P1213
[9]   Individual single-wall carbon nanotubes as quantum wires [J].
Tans, SJ ;
Devoret, MH ;
Dai, HJ ;
Thess, A ;
Smalley, RE ;
Geerligs, LJ ;
Dekker, C .
NATURE, 1997, 386 (6624) :474-477
[10]   Room-temperature transistor based on a single carbon nanotube [J].
Tans, SJ ;
Verschueren, ARM ;
Dekker, C .
NATURE, 1998, 393 (6680) :49-52