Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes

被引：6

作者：

Fischer, Alec M. ^{[1
]}

Sun, Kewei W. ^{[1
]}

Juday, Reid ^{[1
]}

Ponce, Fernando A. ^{[1
]}

Ryou, Jae-Hyun ^{[2
,3
]}

Kim, Hee Jin ^{[2
,3
]}

Choi, Suk ^{[2
,3
]}

Kim, Seong-Soo ^{[2
,3
]}

Dupuis, Russell D. ^{[2
,3
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Georgia Inst Technol, Ctr Compound Semicond, Atlanta, GA USA

[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA USA

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 03期

关键词：

HOLOGRAPHY;

D O I：

10.1143/APEX.3.031003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAlN layers grown lattice-matched to GaN have been used to optimize the internal quantum efficiency of InGaN quantum-well device structures emitting in the green region of the visible spectrum. The electron-blocking properties of InAlN layers significantly depend on their growth temperature. Devices with InAlN layers grown at 780 and 840 degrees C exhibit significant variations in the quantum well emission characteristics, with 780 degrees C producing the highest emission efficiency. Three-and two-dimensional growth modes are observed in the layers grown at low and high temperatures, respectively. The former should allow higher hole transport through the narrow regions of the blocking layer. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 12 条

[1]

[Anonymous], UNPUB

[2] Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire [J].