Design and performance of asymmetric waveguide nitride laser diodes

被引：8

作者：

Bour, DP

Kneissl, M

Van de Walle, CG

Evans, GA

Romano, LT

Northrup, J

Teepe, M

Wood, R

Schmidt, T

Schoffberger, S

Johnson, NM

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Elect Mat Lab, Palo Alto, CA 94304 USA

[2] So Methodist Univ, Sch Engn & Appl Sci, Dallas, TX 75275 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2000年 / 36卷 / 02期

关键词：

CVD; group-III nitrides; InGaN quantum well; quantum-well lasers; semiconductor epitaxial layers; semiconductor lasers;

D O I：

10.1109/3.823464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe the design and performance characteristics of an asymmetric waveguide nitride laser diode structure, in which the p-cladding layer is placed immediately ol er the mutiple-quantum-well (MQW) active region. Its close proximity to the active region enables it to serve not only. as a cladding layer, but also as a potential barrier that confines injected electrons. This structure represents a departure from conventional nitride laser diode structures, where electron confinement is provided by a separate high-aluminum-content AlGaN tunnel barrier layer placed over the MQW active region. The optical confinement factor (Gamma) remains comparable to that of the conventional structure, in spite of the QW's displacement from the center of the waveguide. Room-temperature CW operation was achieved with this structure.

引用

页码：184 / 191

页数：8

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