Cleaved and etched facet nitride laser diodes

被引：14

作者：

Abare, AC ^{[1
]}

Mack, MP

Hansen, M

Sink, RK

Kozodoy, P

Keller, S

Speck, JS

Bowers, JE

Mishra, UK

Coldren, LA

DenBaars, SP

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[3] USAF, Wright Lab, Wright Patterson AFB, OH 45433 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 03期

基金：

美国国家科学基金会;

关键词：

blue; diode; InGaN; GaN; laser; nitride; MQW; pulsed; room temperature;

D O I：

10.1109/2944.704109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature (RT) pulsed operation of blue (420 mm) nitride-based multiquantum-well laser diodes grown on a-plane and c-plane sapphire substrates has been demonstrated. Structures investigated include etched and cleaved facets as well as doped and undoped quantum wells. A combination of atmospheric and low-pressure metal organic chemical vapor deposition using a modified two-flow horizontal reactor was employed. Threshold current densities as low as 12.6 kA/cm(2) were observed for 10 x 1200 mu m lasers with uncoated reactive ion etched facets on c-plane sapphire, Cleaved facet lasers were also demonstrated with similar performance on a-plane sapphire. Laser diodes tested under pulsed conditions operated up to 6 h at RT, Lasing was achieved up to 95 degrees C and up to a 150-ns pulselength (RT), Threshold current increased with temperature with a characteristic temperature T-0 of 114 K.

引用

页码：505 / 509

页数：5

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