Room-temperature pulsed operation of GaN-based laser diodes on a-face sapphire substrate grown by low-pressure metalorganic chemical vapor deposition

被引：6

作者：

Kimura, Y ^{[1
]}

Miyachi, M ^{[1
]}

Takahashi, H ^{[1
]}

Tanaka, T ^{[1
]}

Nishitsuka, M ^{[1
]}

Watanabe, A ^{[1
]}

Ota, H ^{[1
]}

Chikuma, K ^{[1
]}

机构：

[1] Pioneer Elect Corp, Corp Res & Dev Labs, Tsurugashima, Saitama 3502288, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 10B期

关键词：

GaN; InGaN; AlGaN; MOCVD; laser;

D O I：

10.1143/JJAP.37.L1231

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the room-temperature pulsed current operation of GaN-based laser diodes on a (11(2) over bar 0) (a-face) sapphire substrate grown by low-pressure metalorganic chemical vapor deposition (LP MOCVD). Ethyl biscyclopentadienyl magnesium (Et-Cp2Mg) and methyl silane (Me-SiH3) were used as precursors for dopants. The cavity mirror facets were formed by cleaving an a-face sapphire substrate along (<1(1)over bar>02) (r-face). The threshold current density was 41 kA/cm(2) and the operating voltage at the threshold was 35 V. Above the threshold, laser emission was observed at 411 nm.

引用

页码：L1231 / L1233

页数：3

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