Recent progress in group-III nitride light-emitting diodes

被引：66

作者：

Mukai, T ^{[1
]}

机构：

[1] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 02期

关键词：

dislocation; efficiency; GaN; InGaN; light-emitting-diodes;

D O I：

10.1109/2944.999179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we review the recent progress of nitride-based light-emitting diodes (LEDs) and discuss the dislocation issue and luminous efficiency. First, candela-class blue LEDs have been developed. InGaN layer was used for nitride LEDs instead of GaN active layer. The quantum-well-structure InGaN active layer dramatically improved the external quantum efficiency. There are a number of threading dislocations in epitaxial layer of nitride-based LEDs. InGaN-LEDs, however, have quite high external quantum efficiency. With regard to this, it is thought that the fluctuation of indium mole fraction is strongly related to the high external quantum efficiency. We also discuss the method to improve the external quantum efficiency of nitride-based LEDs.

引用

页码：264 / 270

页数：7

共 18 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[4] Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth [J].

Chichibu, SF ;

Marchand, H ;

Minsky, MS ;

Keller, S ;

Fini, PT ;

Ibbetson, JP ;

Fleischer, SB ;

Speck, JS ;

Bowers, JE ;

Hu, E ;

Mishra, UK ;

DenBaars, SP ;

Deguchi, T ;

Soto, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1460-1462

[5] AlCaInP light-emitting diodes [J].

Kish, FA ;

Fletcher, RM .

HIGH BRIGHTNESS LIGHT EMITTING DIODES, 1997, 48 :149-+

[6] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES [J].

LESTER, SD ;

PONCE, FA ;

CRAFORD, MG ;

STEIGERWALD, DA .

APPLIED PHYSICS LETTERS, 1995, 66 (10) :1249-1251

[7] High-power UV InCaN/AlGaN double-heterostructure LEDs [J].

Mukai, T ;

Morita, D ;

Nakamura, S .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :778-781

[8] Amber InGaN-based light-emitting diodes operable at high ambient temperatures [J].

Mukai, T ;

Narimatsu, H ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A) :L479-L481

[9] NOVEL METALORGANIC CHEMICAL VAPOR-DEPOSITION SYSTEM FOR GAN GROWTH [J].

NAKAMURA, S ;

HARADA, Y ;

SENO, M .

APPLIED PHYSICS LETTERS, 1991, 58 (18) :2021-2023

[10] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].

NAKAMURA, S ;

SENOH, N ;

IWASA, N ;

NAGAHAMA, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799

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