Piezoelectric properties and poling effect of Pb(Zr, Ti)O3 thick films prepared for microactuators by aerosol deposition

被引:187
作者
Akedo, J [1 ]
Lebedev, M [1 ]
机构
[1] AIST, AIST, Mech Engn Lab, Tsukuba, Ibaraki 3058564, Japan
关键词
D O I
10.1063/1.1309029
中图分类号
O59 [应用物理学];
学科分类号
摘要
Crack-free [Pb(Zr-0.52, Ti-0.48)O-3] (PZT) films with more than 10 mu m thickness as the piezoelectric material, were formed on stainless-steel (SUS304) and Pt/Ti/SiO2/Si substrates by aerosol deposition and then annealed at 600 degrees C in air. The deposition rate was 20 mu m/min in an area of 5x5 mm(2). To estimate the piezoelectric and mechanical properties of PZT films, a unimorph structured PZT and a free-standing cantilever were fabricated. The Young's modulus (Y-11) of the PZT film was 80 GPa. Poling at 40 kV/cm, 250 degrees C for 20 min increased the properties by a factor of 4.0-5.5, resulting in the piezoelectric coefficient (-d(31)) varying from 80 to 180 pm/V. (C) 2000 American Institute of Physics. [S0003- 6951(00)03237-X].
引用
收藏
页码:1710 / 1712
页数:3
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