Wheatstone bridge method for electromigration study of solder balls in flip-chip packages

被引:5
作者
Ding, M [1 ]
Matsuhashi, H [1 ]
Ho, PS [1 ]
Marathe, A [1 ]
Master, R [1 ]
Pham, V [1 ]
机构
[1] Univ Texas, Ctr Microelect Res, Austin, TX 78712 USA
来源
41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2003年
关键词
D O I
10.1109/RELPHY.2003.1197788
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we describe a new approach and a new system developed for EM tests of solder balls in a packaging assembly. The approach was based on the Wheatstone Bridge Method, which provided significant improvement in the sensitivity for detecting EM damage in solder balls. In the bridge circuit, each of the arms can contain an ensemble of solder balls connected in series and/or in parallel to increase the number of solder balls being tested. Thus the method can be used for EM tests of a large ensemble of solder balls, extending the range of statistical detection of early failures and reducing EM test time. Using this method, EM tests were performed at 165degrees and 235degreesC on 97Pb-3Sn solder balls in ceramic flip-chip packages. The results yielded an activation energy of 0.85eV. By extending the test time to 2000 hrs at 165degreesC, all of the test circuits except one showed resistance saturation, suggesting the existence of a threshold jL(c) product. Subjected to a maximum resistance change of about 15 mOmega, the jL(c) product was estimated to be 110 A-cm for 97Pb-3Sn solders at 165degreesC.
引用
收藏
页码:442 / 446
页数:5
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