Field emitters based on Si tips with AlN coating

被引:15
作者
Spitsyn, BV
Zhirnov, VV
Blaut-Bachev, AN
Bormatova, LV
Belyanin, AF
Pashchenko, PV
Bouilov, LL
Givargizov, EI
机构
[1] Russian Acad Sci, Inst Phys Chem, Moscow 117915, Russia
[2] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia
[3] TECHNOMASH Cent Res Technol Inst, Moscow 121355, Russia
关键词
aluminum nitride; field emission; silicon tips;
D O I
10.1016/S0925-9635(97)00280-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon field emitters were coated with AlN by a reactive magnetron sputtering technique. The thickness of the coatings varied from 0.5 to 2 mu m. Emission characteristics of AlN coated emitters were measured. The poor reproducibility of emission characteristics for different samples prepared at the same conditions may be attributed to the non-reproducible concentration of impurities, first of all, oxygen in AlN films. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:692 / 694
页数:3
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