Kinetics of initial layer-by-layer oxidation of Si(OO1) surfaces

被引：268

作者：

Watanabe, H

Kato, K

Uda, T

Fujita, K

Ichikawa, M

Kawamura, T

Terakura, K

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Ibaraki, Osaka 305, Japan

[2] Yamanashi Univ, Dept Phys, Yamanashi 400, Japan

[3] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Ibaraki, Osaka 305, Japan

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.80.345

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Layer-by-layer oxidation of Si(001) surfaces has been studied by scanning reflection electron microscopy (SREM). The oxidation kinetics of the top and second layers were independently investigated from the change in oxygen Auger peak intensity calibrated from the SREM observation. A barrierless oxidation of the first subsurface layer, as well as oxygen chemisorption onto the top layer, occurs at room temperature. The energy barrier of the second-layer oxidation was found to be 0.3 eV. The initial oxidation kinetics are discussed based on first-principles calculations.

引用

页码：345 / 348

页数：4

共 25 条

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