Low temperature preparation and electric properties of highly (100)-oriented Pb0.8 La0.1Ca0.1Ti0.975O3 thin films prepared by a sol-gel route

被引：13

作者：

Chi, Q. G. ^{[1
]}

Li, W. L. ^{[1
]}

Zhao, Y. ^{[1
]}

Fei, W. D. ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2010年 / 54卷 / 03期

关键词：

Orientation; Low-temperature growth; PLCT thin films; Electric properties; PYROELECTRIC PROPERTIES; DIELECTRIC-PROPERTIES; SEED LAYER; POLARIZATION; CRYSTALLIZATION; EVOLUTION; MEMORIES; GROWTH; SI;

D O I：

10.1007/s10971-010-2192-y

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Highly (100)-oriented Pb0.8La0.1Ca0.1Ti0.975O3 (PLCT) thin films deposited on Pt/Ti/SiO2/Si substrate were successfully achieved by a sol-gel route. The influence of annealing temperature on microstructures and electric properties was investigated; it was found that the PLCT film could be crystallized only at 450 A degrees C. When the annealing temperature increased to 500 A degrees C, the PLCT film exhibited highly (100)-oriented, which also possessed higher remnant polarization Pr (27 mu C/cm(2)) and better pyroelectric figure of merit (F (d) = 205 mu C/m(2)k) at room temperature. It was also found too high annealing temperature (625 A degrees C) could lead to recrystallization of film, and the small grains caused by recrystallization could make polarization reversal difficult and disturbed the preferred crystal growth in film, which was not benefit to obtain enhanced electric properties.

引用

页码：286 / 291

页数：6

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