Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O3 thin films using a Pb0.8Ca0.1La0.1Ti0.975O3 seed layer

被引：15

作者：

Chi, Q. G. ^{[1
]}

Li, W. L. ^{[1
]}

Feng, B. ^{[1
]}

Liu, C. Q. ^{[1
]}

Fei, W. D. ^{[1
]}

机构：

[1] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

SCRIPTA MATERIALIA | 2009年 / 60卷 / 04期

关键词：

Ferroelectricity; Low-temperature crystallization; Texture; ELECTRICAL-PROPERTIES; PB(ZR;

D O I：

10.1016/j.scriptamat.2008.10.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-temperature growth of Pb(Nb0.01Zr0.2Ti0.8)O-3 (PNZT) films, Lis low as 450 degrees C, was successfully achieved by a sol-gel route using a Pb0.8Ca0.1La0.1Ti0.975O3 (PLCT) seed layer. The influence of precursor concentration of the PLCT seed layer on the orientation and ferroelectric properties of PNZT films was investigated. With increasing concentration of the PLCT seed layer, the PNZT films clearly changed from (1 1 1)-oriented to (1 0 0)-oriented. The PNZT films showed a very Square ferroelectric hysteresis loop when the concentration of the PLCT seed layer is 0.05 M. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：218 / 220

页数：3

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