Effect of microwave annealing temperatures on lead zirconate titanate thin films

被引：34

作者：

Bhaskar, Ankam

Chang, H. Y.

Chang, T. H.

Cheng, S. Y.

机构：

[1] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

[2] Natl Taiwan Ocean Univ, Dept Marine Engn, Chilung 20224, Taiwan

[3] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 31060, Taiwan

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 39期

关键词：

D O I：

10.1088/0957-4484/18/39/395704

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Lead zirconate titanate (Pb-1.1( Zr0.52Ti0.48)O-3) thin films of thickness 260 nm on Pt/Ti/SiO2/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700 degrees C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450 degrees C and the film was fully crystallized. The secondary ( again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550 degrees C. The surface morphologies were changed above 550 degrees C of the PZT thin films due to the secondary phase. Higher dielectric constant (epsilon(r)) and lower dielectric loss coercive field (E-c) were achieved for the 450 degrees C film than for the other annealed films.

引用

页数：7

共 34 条

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