Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering

被引：97

作者：

Song, HZ ^{[1
]}

Bao, XM

Li, NS

Wu, XL

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 03期

关键词：

D O I：

10.1063/1.120735

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 degrees C in N-2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence. (C) 1998 American Institute of Physics.

引用

页码：356 / 358

页数：3

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