STUDY OF THERMAL-OXIDATION AND NITROGEN ANNEALING OF LUMINESCENT POROUS SILICON

被引：37

作者：

YAN, J

SHIH, S

JUNG, KH

KWONG, DL

KOVAR, M

WHITE, JM

GNADE, BE

MAGEL, L

机构：

[1] UNIV TEXAS,DEPT CHEM & BIOCHEM,AUSTIN,TX 78712

[2] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.111939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of thermally oxidized porous Si were studied by Fourier-transform infrared spectroscopy and secondary ion mass spectroscopy. The results show that residual hydrogen exists in the 1000-degrees-C/10 min thermally oxidized porous Si film in the form of SiOH bonds. The removal of these hydrogen atoms by annealing at 1000-degrees-C in N2 reduces the photoluminescence.

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页码：1374 / 1376

页数：3

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