COMPARING EFFECTS OF VACUUM ANNEALING AND DRY OXIDATION ON THE PHOTOLUMINESCENCE OF POROUS SI

被引：49

作者：

YAMADA, M

KONDO, K

机构：

[1] Advanced Technology Division, Fujitsu Limited, Nakahara-ku, Kawasaki, 211

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 8A期

关键词：

POROUS SI; PHOTOLUMINESCENCE; QUANTUM CONFINEMENT; VACUUM ANNEALING; OXIDATION;

D O I：

10.1143/JJAP.31.L993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of vacuum annealing and dry oxidation on the photoluminescence properties of porous Si are reported. Anodized porous Si is formed by electrochemical etching in an aqueous HF solution of 16 to 48 wt% with a current density of 10 to 70 mA/cm2. A subsequent vacuum annealing (from 400-degrees-C to 800-degrees-C) weakens the intensity of the photoluminescence, whereas, oxidation using dry oxygen at 5 Torr above 800-degrees-C increases the intensity remarkably in addition to providing blue shifts as large as 100 nm. This study suggests that the visible photoluminescence is due to the modified quasi-direct band-gap structure of Si by the quantum confinement of electrons and holes.

引用

页码：L993 / L996

页数：4

共 20 条

[1] ELECTRON ELECTRON AND ELECTRON-HOLE INTERACTIONS IN SMALL SEMICONDUCTOR CRYSTALLITES - THE SIZE DEPENDENCE OF THE LOWEST EXCITED ELECTRONIC STATE [J].