Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes

被引：26

作者：

Sheng, X ^{[1
]}

Koyama, H ^{[1
]}

Koshida, N ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Fac Technol, Div Elect & Informat Engn, Koganei, Tokyo 184, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The porosity-modulation technique has been applied to improve the emission properties of the previously reported surface-emitting cold cathodes based on electroluminescent porous silicon (PS) diodes. It is demonstrated here that by introducing a modified structure into the PS layer, the emission efficiency is significantly improved. An extremely high efficiency of 12% has been obtained. A significant decrease in the emission current fluctuation and a consequent increase in the durability of the emission are also observed. These results are due to a regulated electric field distribution near the outer surface of the PS layer. (C) 1998 American Vacuum Society. [S0734-211X(98)04102-X].

引用

页码：793 / 795

页数：3

共 8 条

[1] Characterization of porous silicon field emitter properties [J].

Boswell, EC ;

Huang, M ;

Smith, GDW ;

Wilshaw, PR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :1895-1898

[2] Fabrication of silicon field emitters by forming porous silicon [J].

Kim, D ;

Kwon, SJ ;

Lee, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (03) :1906-1909

[3] COLD ELECTRON-EMISSION FROM ELECTROLUMINESCENT POROUS SILICON DIODES [J].

KOSHIDA, N ;

OZAKI, T ;

SHENG, X ;

KOYAMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (6A) :L705-L707

[4] Operation of electroluminescent porous silicon diodes as surface-emitting cold cathodes [J].

Sheng, X ;

Ozaki, T ;

Koyama, H ;

Koshida, N ;

Yoshikawa, T ;

Yamaguchi, M ;

Ogasawara, K .

THIN SOLID FILMS, 1997, 297 (1-2) :314-316

[5] Improved cold electron emission characteristics of electroluminescent porous silicon diodes [J].

Sheng, X ;

Koyama, H ;

Koshida, N ;

Iwasaki, S ;

Negishi, N ;

Chuman, T ;

Yoshikawa, T ;

Ogasawara, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05) :1661-1665

[6]

SHENG X, 1996, P INT S ADV LUM MAT, P87

[7] ENHANCEMENT IN EMISSION CURRENT FROM DRY-PROCESSED N-TYPE SI FIELD EMITTER ARRAYS AFTER TIP ANODIZATION [J].

TAKAI, M ;

YAMASHITA, M ;

WILLE, H ;

YURA, S ;

HORIBATA, S ;

OTOTAKE, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :441-444

[8]

Yue W. K., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P167, DOI 10.1109/IEDM.1990.237201

← 1 →