A proposed TlGaAs/AlGaAs pseudomorphic heterostructure field effect transistor

A new heterostructure field effect transistor is proposed consisting of a pseudomorphic TlGaAs channel combined with an AlGaAs charge supply layer, the whole structure grown on a GaAs substrate. The properties of TlGaAs from previously published calculations and some simple scaling rules for the effective mass, mobility, and conduction band separation are predicted. The expected charge density in a realistic channel. is calculated self-consistently and the expected critical thickness is discussed. The results suggest that a marked improvement in device performance can be expected over similar structures containing InGaAs. (C) 1998 American Institute of Physics.