Mechanical polishing technique for carbon nanotube interconnects in ULSIs

被引:16
作者
Horibe, M
Nihei, M
Kondo, D
Kawabata, A
Awano, Y
机构
[1] Fujitsu Ltd, Atsugi, Kanagawa 2430197, Japan
[2] Fujitsu Labs Ltd, Yokoyama Fellow Grp, Atsugi, Kanagawa 2430197, Japan
[3] Fujitsu Labs Ltd, Nanotechnol Res Ctr, Atsugi, Kanagawa 2430197, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 9A期
关键词
future ultralarge scale integrated (ULSI) circuits; interconnects; multiwalled carbon nanotube (MWNT); mechanical polishing technique; diamond particles;
D O I
10.1143/JJAP.43.6499
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examined a mechanical polishing technique for multiwalled carbon nanotube (MWNT) vias. This polishing technique involved the use of diamond particles fixing MWNT protrusions of the samples. The 1-mum-high outthrust MWNTs were polished, and then flat sample surfaces were obtained by controlling polishing pressure and polishing time. A cross-sectional image of a cut MWNT was obtained by high-resolution scanning electron microscopy. Mechanically polished MWNT interconnects with a high current density and a low resistance were developed.
引用
收藏
页码:6499 / 6502
页数:4
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