Characterization of ultrathin InAs quantum wells by TEM-cathodoluminescence and TEM techniques

被引：4

作者：

Grillo, V

Genseki, A

Yamamoto, N

Watanabe, Y

机构：

[1] Tokyo Inst Technol, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

[2] Tokyo Inst Technol, Common Res Lab, Meguro Ku, Tokyo 1528551, Japan

[3] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

SURFACE AND INTERFACE ANALYSIS | 2003年 / 35卷 / 01期

关键词：

InAs; ultrathin quantum wells; cathodoluminescence; diffusion; quantum dots capture;

D O I：

10.1002/sia.1490

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Emission from ultrathin quantum wells of different thicknesses is studied. In particular, for structures with doped substrate the unintentional deposition of Cu droplets is used as a probe of electron diffusion inside the material. A large diffusion length (L = 8 +/- 3 mum) is found in spite of the presence of quantum dots. In particular, the contribution to the diffusion from re-emission of electrons from quantum dots is evaluated. Copyright (C) 2003 John Wiley Sons, Ltd.

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页码：40 / 44

页数：5

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