The deposition of diamond film with high thermal conductivity

被引:21
作者
Gu, CZ [1 ]
Jin, ZS
Lu, XY
Zou, GT
Zhang, JF
Fang, RC
机构
[1] Jilin Univ, State Key Lab Superhard Mat, Changchun 130023, Peoples R China
[2] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China
关键词
chemical vapour deposition (CVD); diamond; grain boundary; impurities;
D O I
10.1016/S0040-6090(97)00447-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the main factors influencing thermal conductivity of diamond film were analyzed in theory. The thermal conductivity of diamond film was measured by means of the photothermal deflection method, Various crystal structures of diamond films were obtained by synthesis with various deposition methods and conditions. Diamond films synthesized under lower concentration of methane and technique of annealing by MWPCVD method have higher thermal conductivity. Thermal conductivity of diamond film increases with the increasing of removal thickness for the SiC layer on the back of the film. (100)-oriented diamond thick films have higher thermal conductivity. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:124 / 127
页数:4
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