High-performance and low-voltage pentacene thin film transistors fabricated on the flexible substrate

被引：7

作者：

Kim, Chang Su

Jo, Sung Jin

Kim, Jong Bok

Ryu, Seung Yoon

Noh, Joo Hyon

Baik, Hong Koo ^{[1
]}

Lee, Se Jong

Song, Kie Moon

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Kyungsung Univ, Dept Mat Sci & Engn, Pusan 608736, South Korea

[3] Konkuk Univ, Dept Appl Phys, Chungju 380701, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 07期

关键词：

D O I：

10.1088/0268-1242/22/7/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of low operating voltage pentacene thin film transistors with PVP (poly-4-vinylphenol)/ CeO2 - SiO2/PVP triple dielectric layers on a flexible substrate. Our triple dielectric layers exhibited a markedly reduced leakage current characteristic and a relatively high capacitance. The field effect mobility, on/off current ratio and subthreshold slope obtained from pentacene thin film transistors were 0.67 cm(2) V s(-1), 10(5) and 0.36 V dec(-1), respectively. It was demonstrated that the spin-coating polymer layer can be used to planarize the surface irregularities and to improve the dielectric and device properties.

引用

收藏

页码：691 / 694

页数：4

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