Infrared near-field imaging of implanted semiconductors: Evidence of a pure dielectric contrast

被引：67

作者：

Lahrech, A

Bachelot, R

Gleyzes, P

Boccara, AC

机构：

[1] Laboratoire d'Optique Physique, Ecl. Sup. Phys. Chim. Indust. V., UPR A0005

[2] Universite de Technologie de Troyes, Nanotechnology Optical Instrum. Lab., 10010 Troyes Cedex

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.119798

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we demonstrate the ability of our reflection mode scanning near-field optical microscope functioning in the mid-infrared to reveal infrared dielectric contrast in absence of any topographical contrast. This contrast is induced by local structures prepared by low energy boron implantation in silicon. (C) 1997 American Institute of Physics.

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页码：575 / 577

页数：3

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