Improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor

被引：83

作者：

Kordos, P. ^{[1
]}

Gregusova, D.

Stoklas, R.

Cico, K.

Novak, J.

机构：

[1] Slovak Univ Technol Bratislava, Dept Microelect, SK-81219 Bratislava, Slovakia

[2] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期

关键词：

D O I：

10.1063/1.2716846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on improved transport properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs). It is found that the drift mobility in the MOSHFET structures with 4 nm thick Al2O3 gate oxide is significantly higher than that in HFETs. The zero-bias mobilities are 1950 and 1630 cm(2)/V s for the MOSHFET and HFET, respectively. An similar to 40% increase of the saturation drain current in the MOSHFETs compared to the HFETs seems to be larger than expected from the passivation effects. The MOSHFET devices show a higher transconductance (with peak values of similar to 115 mS/mm) than the HFETs (similar to 70 mS/mm). Analysis of the device performance indicates a decrease of the parasitic series resistance together with an enhancement of the effective velocity of the channel electrons in the MOSHFET devices. (c) 2007 American Institute of Physics.

引用

页数：3

共 18 条

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