High field transport in GaN/AlGaN heterostructures

被引：43

作者：

Barker, JM ^{[1
]}

Ferry, DK

Goodnick, SM

Koleske, DD

Allerman, A

Shul, RJ

机构：

[1] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 04期

关键词：

D O I：

10.1116/1.1775199

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental as well as theoretical studies have been performed on the velocity-field characteristics of AlGaN/GaN heterostructures. A comparison of these studies shows that the experimental velocities are comparable to those expected from previously published simulations based upon Monte Carlo techniques. Several possible mechanisms for the low value of the velocity previously found are discussed, including nonequilibrium phonons and local inhomogeneities in the field. (C) 2004 American Vacuum Society.

引用

页码：2045 / 2050

页数：6

共 40 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2] Electron drift velocity in AlGaN/GaN channel at high electric fields [J].

Ardaravicius, L ;

Matulionis, A ;

Liberis, J ;

Kiprijanovic, O ;

Ramonas, M ;

Eastman, LF ;

Shealy, JR ;

Vertiatchikh, A .

APPLIED PHYSICS LETTERS, 2003, 83 (19) :4038-4040

[3] Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures [J].

Barker, JM ;

Ferry, DK ;

Goodnick, SM ;

Koleske, DD ;

Allerman, A ;

Shul, RJ .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) :S478-S480

[4] High-field transport studies of GaN [J].

Barker, JM ;

Akis, R ;

Ferry, DK ;

Goodnick, SM ;

Thornton, TJ ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

PHYSICA B-CONDENSED MATTER, 2002, 314 (1-4) :39-41

[5] Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures [J].

Barker, JM ;

Ferry, DK ;

Goodnick, SM ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

MICROELECTRONIC ENGINEERING, 2002, 63 (1-3) :193-197

[6] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[7] HOT-ELECTRON MICROWAVE CONDUCTIVITY OF WIDE BANDGAP SEMICONDUCTORS [J].

DAS, P ;

FERRY, DK .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :851-855

[8]

Ferry D., 2002, J. Comput. Electron., V1, P59, DOI [10.1023/A:1020763710906, DOI 10.1023/A:1020763710906]

[9]

Ferry D. K., 2000, SEMICONDUCTOR TRANSP

[10] ENERGY-DIFFUSION EQUATION IN HOT-ELECTRON PROBLEMS - DISTURBANCE OF POLAR-OPTICAL-PHONON DISTRIBUTION [J].

FERRY, DK .

PHYSICAL REVIEW B, 1973, 8 (04) :1544-1555

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