Nucleation and growth of SrTiO3/Si(100) observed by atomic force microscopy

被引:9
作者
Castro-Rodriguez, R
Oliva, AI
Aguilar, M
Bartolo-Perez, P
Vasco, E
Leccabue, F
Penal, JL
机构
[1] CNR, Inst Maspec, I-43100 Parma, Italy
[2] IPN, CINVESTAV, Dept Appl Phys, Merida 97310, Yucatan, Mexico
关键词
strontium titanate; ferroelectric thin film; pulsed laser deposition;
D O I
10.1016/S0169-4332(97)00392-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Strontium titanate thin films were studied with X-ray diffraction and atomic force microscopy during growth at different pressures and temperatures. The nucleation process on top of the islands grown was directly observed with high-resolution. The surface morphology of the films was found to depend on the ambient oxygen pressure and substrate temperature during growth. The films were grown by pulsed laser deposition at different ambient oxygen pressure. The surface roughness of the films decreased with decreasing ambient oxygen growth pressure and with increasing substrate temperatures. The high nucleation probability on top of the films results in an effective mass transport on top of the first-layer islands. (C) 1998 Elsevier Science B.V.
引用
收藏
页码:58 / 64
页数:7
相关论文
共 14 条
[1]   COMPUTER-SIMULATION STUDIES OF STRONTIUM-TITANATE [J].
AKHTAR, MJ ;
AKHTAR, ZUN ;
JACKSON, RA ;
CATLOW, CRA .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (02) :421-428
[2]  
Cullity B. D., 1978, ELEMENTS XRAY DIFFRA
[3]  
Gao H, 1993, J MECH PHYS SOLIDS, V42, P741
[4]   ELECTRICAL-CONDUCTIVITY OF SPUTTERED FILMS OF STRONTIUM-TITANATE [J].
GERBLINGER, J ;
MEIXNER, H .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (12) :7453-7459
[5]  
GERBLINGER J, 1994, SENSOR ACTUAT B-CHEM, V18, P529
[6]   THE ROLE OF FILM REEMISSION AND GAS SCATTERING PROCESSES ON THE STOICHIOMETRY OF LASER-DEPOSITED FILMS [J].
GONZALO, J ;
AFONSO, CN ;
PERRIERE, J .
APPLIED PHYSICS LETTERS, 1995, 67 (09) :1325-1327
[7]   TEMPERATURE CHARACTERISTICS OF ELECTRICAL-PROPERTIES OF (BA,SR)TIO3 THICK-FILM HUMIDITY SENSORS [J].
HOLC, J ;
SLUNECKO, J ;
HROVAT, M .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) :99-102
[8]   MONTE-CARLO SIMULATIONS OF THE TRANSPORT OF LASER-ABLATED ATOMS IN A DILUTED GAS [J].
KOOLS, JCS .
JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) :6401-6406
[9]  
PASIERB P, 1996, 10 INT C THIN FILMS
[10]   BARRIER LAYERS FOR REALIZATION OF HIGH CAPACITANCE DENSITY IN SRTIO3 THIN-FILM CAPACITOR ON SILICON [J].
SAKUMA, T ;
YAMAMICHI, S ;
MATSUBARA, S ;
YAMAGUCHI, H ;
MIYASAKA, Y .
APPLIED PHYSICS LETTERS, 1990, 57 (23) :2431-2433