Analyzing atomic force microscopy images using spectral methods

被引:131
作者
Fang, SJ
Haplepete, S
Chen, W
Helms, CR
Edwards, H
机构
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[2] Texas Instruments Inc, Components & Mat Res Ctr, Dallas, TX 75265 USA
关键词
D O I
10.1063/1.366489
中图分类号
O59 [应用物理学];
学科分类号
摘要
Various statistical quantities (such as average, peak-to-valley, and root-mean-square roughness) have been applied to characterize surface topography. However, they provide only vertical information. Because spectral analysis provides both lateral and longitudinal information, it is a more informative measurement than all these commonly used statistical quantities. Unfortunately, a standard method to calculate power spectral density (PSD) is not available, For example, the dimensions of PSD are often denoted as either (length)(3) or (length)(4). This may lead to confusion when utilizing spectral analysis to study surface morphology. In this paper, we will first compare the definitions of PSD commonly used by various authors. Using silicon surface roughness measurements as examples, we will demonstrate the advantages of spectral methods on atomic force microscopic (AFM) image analysis. In this context, we study the effects of typical AFM imaging distortions such as image bow, drift, tip-shape effects, and acoustic noise. As a result, we will provide a procedure to obtain accurate and reproducible AFM measurements. (C) 1997 American Institute of Physics.
引用
收藏
页码:5891 / 5898
页数:8
相关论文
共 36 条
[1]   MICROFABRICATION OF CANTILEVER STYLI FOR THE ATOMIC FORCE MICROSCOPE [J].
ALBRECHT, TR ;
AKAMINE, S ;
CARVER, TE ;
QUATE, CF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (04) :3386-3396
[2]  
BARCEWELL RN, 1986, FOURIER TRANSFORM IT
[3]   ATOMIC FORCE MICROSCOPE [J].
BINNIG, G ;
QUATE, CF ;
GERBER, C .
PHYSICAL REVIEW LETTERS, 1986, 56 (09) :930-933
[4]   7X7 RECONSTRUCTION ON SI(111) RESOLVED IN REAL SPACE [J].
BINNIG, G ;
ROHRER, H ;
GERBER, C ;
WEIBEL, E .
PHYSICAL REVIEW LETTERS, 1983, 50 (02) :120-123
[5]  
Bullis WM, 1996, MICRO, V14, P47
[6]   ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].
CHENG, YC ;
SULLIVAN, EA .
SURFACE SCIENCE, 1973, 34 (03) :717-731
[7]   SURFACE-ROUGHNESS OF ION-IMPLANTED [100]SILICON STUDIED BY ATOMIC-FORCE MICROSCOPY [J].
COURBOIN, D ;
GROUILLET, A ;
ANDRE, E .
SURFACE SCIENCE, 1995, 342 (1-3) :L1111-L1115
[8]  
Depas M, 1996, ELEC SOC S, V96, P352
[9]   QUANTITATIVE MICROROUGHNESS ANALYSIS DOWN TO THE NANOMETER-SCALE [J].
DUMAS, P ;
BOUFFAKHREDDINE, B ;
AMRA, C ;
VATEL, O ;
ANDRE, E ;
GALINDO, R ;
SALVAN, F .
EUROPHYSICS LETTERS, 1993, 22 (09) :717-722
[10]   New method to estimate step heights in scanning-probe microscope images [J].
Edwards, H .
NANOTECHNOLOGY, 1997, 8 (01) :6-9