Reduction of hysteresis for carbon nanotube mobility measurements using pulsed characterization

被引：100

作者：

Estrada, David ^{[1
]}

Dutta, Sumit ^{[1
]}

Liao, Albert ^{[1
]}

Pop, Eric ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1088/0957-4484/21/8/085702

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We describe a pulsed measurement technique for suppressing hysteresis for carbon nanotube (CNT) device measurements in air, vacuum, and over a wide temperature range (80-453 K). Varying the gate pulse width and duty cycle probes the relaxation times associated with charge trapping near the CNT, found to be up to the 0.1-10 s range. Longer off times between voltage pulses enable consistent, hysteresis-free measurements of CNT mobility. A tunneling front model for charge trapping and relaxation is also described, suggesting trap depths up to 4-8 nm for CNTs on SiO2. Pulsed measurements will also be applicable for other nanoscale devices such as graphene, nanowires, or molecular electronics, and could enable probing trap relaxation times in a variety of material system interfaces.

引用

页数：7

共 29 条

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