Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

被引：89

作者：

King, P. D. C.

Veal, T. D.

Jefferson, P. H.

McConville, C. F.

Wang, T.

Parbrook, P. J.

Lu, Hai

Schaff, W. J.

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Sheffield, EPSRC Natl Ctr Technol 3, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

[3] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2716994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.

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页数：3

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