High energy implantation by ion projection

A new type of ion projector is proposed to structurize a wafer at a resolution below 200 nm reducing the typically used lithography steps to a large extent. Basically, this technique aims to project a mask onto a wafer using an ion optical lens system allowing a demagnification up to 1:50 for ions with energies between 100 keV and some MeV. The center piece of this device is a single magnetic lens consisting of a superconducting solenoid. The achievable lateral resolution depends on lens errors, stability of the stencil mask and straggling of the implanted ions. A variation of the implantation energy would allow three dimensional structurization.