Catalytic growth and characterization of Ga2O3 nanowires

被引：18

作者：

Chang, KW ^{[1
]}

Wu, JJ ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2003年 / 76卷 / 04期

关键词：

D O I：

10.1007/s00339-002-2016-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

beta-Ga2O3 nanowires have been synthesized using Ga metal and H2O vapor at 800 degreesC in the presence of Ni catalyst on the substrate. Remarkable reduction of the diameter and increase of the length of the Ga2O3 nanowires are achieved by separation of Ga metal and H2O vapor before they reach the substrate. Transmission electron microscopy analyses indicate that the beta-Ga2O3 nanowires possess a single-crystalline structure. Photoluminescence measurements show two broad emission bands centered at 290 nm and 390 nm at room temperature.

引用

页码：629 / 631

页数：3

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