Growth sector dependence of low frequency Raman peaks observed in boron-doped homoepitaxial diamond particles

被引:12
作者
Wang, YG [1 ]
Li, HD [1 ]
Lin, ZD [1 ]
Feng, K [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2000年 / 39卷 / 5A期
关键词
boron doping; low frequency Raman peak; homoepitaxial diamond particle;
D O I
10.1143/JJAP.39.2795
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Raman spectra of boron doped homoepitaxial diamond particles are investigated. The low frequency parts of the Raman scattering spectra of (100) and (111) growth sectors are very different in peak numbers and in peak positions. (100) facet has three broad hands centered at 580, 920 and 1020 cm(-1), (111) facet has only two centered at 500 and 1180 cm(-1). These low frequency peaks originate from Raman scattering by phonons Car from the center of the Brillouin zone. Electronic Raman scattering may also contribute to part of the Raman spectra.
引用
收藏
页码:2795 / 2796
页数:2
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