Efficient carrier multiplication in InP nanoparticles

被引：91

作者：

Stubbs, Stuart K. ^{[1
,2
]}

Hardman, Samantha J. O. ^{[1
,2
]}

Graham, Darren M. ^{[1
,2
]}

Spencer, Ben F. ^{[1
,2
,3
]}

Flavell, Wendy R. ^{[1
,2
]}

Glarvey, Paul ^{[4
]}

Masala, Ombretta ^{[4
]}

Pickett, Nigel L. ^{[4
]}

Binks, David J. ^{[1
,2
]}

机构：

[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[2] Univ Manchester, Photon Sci Inst, Manchester M13 9PL, Lancs, England

[3] STFC Daresbury Lab, Cockcroft Inst, Warrington WA4 4AD, Cheshire, England

[4] Nanoco Technol Ltd, Manchester M13 9NT, Lancs, England

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

MULTIPLE EXCITON GENERATION; QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; MULTIEXCITON GENERATION; SILICON; PBSE; EXCITATION; LIMIT;

D O I：

10.1103/PhysRevB.81.081303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Efficient carrier multiplication in InP nanoparticles is reported; ultrafast transient absorption measurements at the band edge were used to determine the number of excitons per photoexcited nanoparticle for a range of both excitation fluences and photon energies. At photon energies greater than 2.1 +/- 0.2 times the band gap, an average of more than 1 exciton per photoexcited nanoparticle was found even in the limit of vanishing fluence. The average number of excitons generated by an absorbed photon was measured to be 1.18 +/- 0.03 for excitation photons with energies 2.6 times the band gap.

引用

页数：4

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