Electrical characterization of low permittivity materials for ULSI inter-metal-insulation

被引:8
作者
Cluzel, J
Mondon, F
Loquet, Y
Morand, Y
Reimbold, G
机构
[1] CEA, LETI, DMEL, F-38054 Grenoble 9, France
[2] Univ Grenoble 1, F-38041 Grenoble, France
[3] ST Microelect, F-38926 Crolles, France
关键词
D O I
10.1016/S0026-2714(99)00319-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ever increasing demand for high performance integrated devices results in more and more low dielectric constant materials being proposed to replace silica for interconnects insulation. We present results concerning two organic materials (Flare and SiLK) and one mineral (porous silica). These materials present good dielectric characteristics when dry, i.e. they have a very low leakage current and a long breakdown time to failure. However, moisture uptake weakens their characteristics. The leakage current is increased, but generally not in a crucial manner. More critical is the drastic decrease of the breakdown time to failure. This sensitivity must be taken into account both in wafer encapsulation design and during the process of eliminating residual moisture before encapsulation of each low-k material layer. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:675 / 678
页数:4
相关论文
共 5 条
[1]   Interface formation between metals (Cu, Ti) and low dielectric constant organic polymer (FLARE™ 1.0) [J].
Du, M ;
Opila, RL ;
Case, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (01) :155-162
[2]  
IONESCU AM, 1999, MRS SPRING M
[3]   Nanoporous silica as an ultralow-k dielectric [J].
Jin, CM ;
Luttmer, JD ;
Smith, DM ;
Ramos, TA .
MRS BULLETIN, 1997, 22 (10) :39-42
[4]   Damascene copper interconnects with polymer ILDs [J].
Price, DT ;
Gutmann, RJ ;
Murarka, SP .
THIN SOLID FILMS, 1997, 308 :523-528
[5]   Silk polymer coating with low dielectric constant and high thermal stability for ULSI interlayer dielectric [J].
Townsend, PH ;
Martin, SJ ;
Godschalx, J ;
Romer, DR ;
Smith, DW ;
Castillo, D ;
DeVries, R ;
Buske, G ;
Rondan, N ;
Froelicher, S ;
Marshall, J ;
Shaffer, EO ;
Im, JH .
LOW-DIELECTRIC CONSTANT MATERIALS III, 1997, 476 :9-17